NTE2367

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA, 5V

Frequency - Transition :

250 MHz

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 Short Body

Part Status :

Active

Power - Max :

300 mW

Resistor - Base (R1) :

4.7 kOhms

Resistor - Emitter Base (R2) :

4.7 kOhms

Supplier Device Package :

TO-92S

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50 V