RN1407,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA, 5V

Frequency - Transition :

250 MHz

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Active

Power - Max :

200 mW

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

47 kOhms

Supplier Device Package :

S-Mini

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50 V