2SB1216S-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

4 A

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

140 @ 500mA, 5V

Frequency - Transition :

130MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Part Status :

Obsolete

Power - Max :

1 W

Supplier Device Package :

TP

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

100 V