- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 8 A
- Current - Collector Cutoff (Max) :
- 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A, 3V
- Frequency - Transition :
- -
- Mounting Type :
- Through Hole
- Operating Temperature :
- -
- Package / Case :
- TO-220-3
- Part Status :
- Obsolete
- Power - Max :
- 65 W
- Supplier Device Package :
- TO-220
- Transistor Type :
- NPN - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Datasheets
- NJVBDX53C
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
NJVBD139G | Rochester Electronics | 5,800 | BIP C77 NPN 1.5A 80V |
NJVBD437TG | Rochester Electronics | 5,800 | BIP C77 NPN 4A 45V |
NJVBDX33CG | Rochester Electronics | 29,150 | BIP TO-220 NPN 10A 100V |
NJVBUB323ZT4G | onsemi | 5,800 | TRANS NPN DARL 350V 10A D2PAK |