DXTN10060DFJBQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

4 A

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

340 @ 200mA, 2V

Frequency - Transition :

125MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

3-UDFN Exposed Pad

Part Status :

Active

Power - Max :

1.8 W

Supplier Device Package :

U-DFN2020-3 (Type B)

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

320mV @ 200mA, 4A

Voltage - Collector Emitter Breakdown (Max) :

60 V