MT3S113(TE85L,F)
- Mfr.Part #
- MT3S113(TE85L,F)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package/Case
- -
- Datasheet
- Download
- Description
- RF TRANS NPN 5.3V 12.5GHZ SMINI
- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 30mA, 5V
- Frequency - Transition :
- 12.5GHz
- Gain :
- 11.8dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.45dB @ 1GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Part Status :
- Active
- Power - Max :
- 800mW
- Supplier Device Package :
- S-Mini
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 5.3V
- Datasheets
- MT3S113(TE85L,F)
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|---|---|---|---|
| MT3S111(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 10,307 | RF TRANS NPN 6V 11.5GHZ SMINI |
| MT3S111P(TE12L,F) | Toshiba Electronic Devices and Storage Corporation | 675 | RF TRANS NPN 6V 8GHZ PW-MINI |
| MT3S111TU,LF | Toshiba Electronic Devices and Storage Corporation | 5,800 | RF SIGE NPN BIPOLAR TRANSISTOR N |
| MT3S113P(TE12L,F) | Toshiba Electronic Devices and Storage Corporation | 1,637 | RF TRANS NPN 5.3V 7.7GHZ PW-MINI |
| MT3S113TU,LF | Toshiba Electronic Devices and Storage Corporation | 5,800 | RF TRANS NPN 5.3V 11.2GHZ UFM |
| MT3S16U(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 4,232 | RF TRANS NPN 5V 4GHZ USM |
| MT3S20P(TE12L,F) | Toshiba Electronic Devices and Storage Corporation | 4 | RF TRANS NPN 12V 7GHZ PW-MINI |
| MT3S20TU(TE85L) | Toshiba Electronic Devices and Storage Corporation | 5,800 | RF TRANS NPN 12V 7GHZ UFM |
