HN1B04FE-Y,LXHF
- Mfr.Part #
- HN1B04FE-Y,LXHF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package/Case
- -
- Datasheet
- Download
- Description
- AUTO AEC-Q PNP + NPN TR VCEO:-50
- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Current - Collector (Ic) (Max) :
- 150mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA, 6V
- Frequency - Transition :
- 80MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- SOT-563, SOT-666
- Part Status :
- Active
- Power - Max :
- 100mW
- Supplier Device Package :
- ES6
- Transistor Type :
- NPN, PNP
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheets
- HN1B04FE-Y,LXHF
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| HN1B04FU-GR,LXHF | Toshiba Electronic Devices and Storage Corporation | 5,800 | AUTO AEC-Q PNP + NPN TR VCEO:-50 |
| HN1B04FU-Y(T5L,F,T | Toshiba Electronic Devices and Storage Corporation | 100 | TRANS NPN/PNP 50V 0.15A US6 |
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| HN1B04FU-Y,LXHF | Toshiba Electronic Devices and Storage Corporation | 5,800 | AUTO AEC-Q PNP + NPN TR VCEO:-50 |
