S12JC M6G
- Mfr.Part #
 - S12JC M6G
 
- Manufacturer
 - Taiwan Semiconductor
 
- Package/Case
 - -
 
- Datasheet
 - Download
 
- Description
 - DIODE GEN PURP 600V 12A DO214AB
 
- Manufacturer :
 - Taiwan Semiconductor
 
- Product Category :
 - Diodes - Rectifiers - Single
 
- Capacitance @ Vr, F :
 - 78pF @ 4V, 1MHz
 
- Current - Average Rectified (Io) :
 - 12A
 
- Current - Reverse Leakage @ Vr :
 - 1 µA @ 600 V
 
- Diode Type :
 - Standard
 
- Mounting Type :
 - Surface Mount
 
- Operating Temperature - Junction :
 - -55°C ~ 150°C
 
- Package / Case :
 - DO-214AB, SMC
 
- Part Status :
 - Discontinued at Digi-Key
 
- Reverse Recovery Time (trr) :
 - -
 
- Speed :
 - Standard Recovery >500ns, > 200mA (Io)
 
- Supplier Device Package :
 - DO-214AB (SMC)
 
- Voltage - DC Reverse (Vr) (Max) :
 - 600 V
 
- Voltage - Forward (Vf) (Max) @ If :
 - 1.1 V @ 12 A
 
- Datasheets
 - S12JC M6G
 
Manufacturer related products
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| Part | Manufacturer | Stock | Description | 
|---|---|---|---|
| S12J | GeneSiC Semiconductor | 5,800 | DIODE GEN PURP 600V 12A DO4 | 
| S12JC M6 | Taiwan Semiconductor | 5,800 | DIODE SCHOTTKY DO214AB | 
| S12JC R6 | Taiwan Semiconductor | 5,800 | DIODE SCHOTTKY DO214AB | 
| S12JC R6G | Taiwan Semiconductor | 5,800 | DIODE SCHOTTKY DO214AB | 
| S12JC R7 | Taiwan Semiconductor | 5,800 | DIODE SCHOTTKY DO214AB | 
| S12JC R7G | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 600V 12A DO214AB | 
| S12JC V6G | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 600V 12A DO214AB | 
| S12JC V7G | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 600V 12A DO214AB | 
| S12JCH | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 600V 12A DO214AB | 
| S12JCHM6G | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 600V 12A DO214AB | 
| S12JCHR7G | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 600V 12A DO214AB | 
| S12JR | GeneSiC Semiconductor | 5,800 | DIODE GEN PURP REV 600V 12A DO4 | 



                                                                                                                        




