IRD3CH11DB6
- Mfr.Part #
 - IRD3CH11DB6
 
- Manufacturer
 - Infineon Technologies
 
- Package/Case
 - -
 
- Datasheet
 - Download
 
- Description
 - DIODE GEN PURP 1.2KV 25A DIE
 
- Manufacturer :
 - Infineon Technologies
 
- Product Category :
 - Diodes - Rectifiers - Single
 
- Capacitance @ Vr, F :
 - -
 
- Current - Average Rectified (Io) :
 - 25A
 
- Current - Reverse Leakage @ Vr :
 - 700 nA @ 1200 V
 
- Diode Type :
 - Standard
 
- Mounting Type :
 - Surface Mount
 
- Operating Temperature - Junction :
 - -40°C ~ 150°C
 
- Package / Case :
 - Die
 
- Part Status :
 - Obsolete
 
- Reverse Recovery Time (trr) :
 - 190 ns
 
- Speed :
 - Fast Recovery =< 500ns, > 200mA (Io)
 
- Supplier Device Package :
 - Die
 
- Voltage - DC Reverse (Vr) (Max) :
 - 1200 V
 
- Voltage - Forward (Vf) (Max) @ If :
 - 2.7 V @ 25 A
 
- Datasheets
 - IRD3CH11DB6
 
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| Part | Manufacturer | Stock | Description | 
|---|---|---|---|
| IRD3900 | Vishay | 5,800 | DIODE GEN PURP 100V 20A DO203AB | 
| IRD3901 | Vishay | 5,800 | DIODE GEN PURP 200V 20A DO203AB | 
| IRD3901R | Vishay | 5,800 | DIODE GEN PURP 200V 20A DO203AB | 
| IRD3902 | Vishay | 5,800 | DIODE GEN PURP 300V 20A DO203AB | 
| IRD3903 | Vishay | 5,800 | DIODE GEN PURP 400V 20A DO203AB | 
| IRD3903R | Vishay | 5,800 | DIODE GEN PURP 400V 20A DO203AB | 
| IRD3909 | Vishay | 5,800 | DIODE GEN PURP 50V 30A DO203AB | 
| IRD3909R | Vishay | 5,800 | DIODE GEN PURP 50V 30A DO203AB | 
| IRD3910 | Vishay | 5,800 | DIODE GEN PURP 100V 30A DO203AB | 
| IRD3910R | Vishay | 5,800 | DIODE GEN PURP 100V 30A DO203AB | 
| IRD3911 | Vishay | 5,800 | DIODE GEN PURP 200V 30A DO203AB | 
| IRD3912 | Vishay | 5,800 | DIODE GEN PURP 300V 30A DO203AB | 
| IRD3CH101DB6 | Infineon Technologies | 5,800 | DIODE GEN PURP 1.2KV 200A DIE | 
| IRD3CH101DD6 | Infineon Technologies | 5,800 | DIODE CHIP EMITTER CONTROLLED | 
| IRD3CH101DF6 | Infineon Technologies | 5,800 | DIODE CHIP EMITTER CONTROLLED | 








