- Manufacturer :
- Vishay
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 20pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 5 µA @ 150 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -65°C ~ 175°C
- Package / Case :
- DO-213AB, MELF (Glass)
- Part Status :
- Discontinued at Digi-Key
- Reverse Recovery Time (trr) :
- 50 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- DO-213AB
- Voltage - DC Reverse (Vr) (Max) :
- 150 V
- Voltage - Forward (Vf) (Max) @ If :
- 1 V @ 1 A
- Datasheets
- EGL41CHE3/96
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Part | Manufacturer | Stock | Description |
---|---|---|---|
EGL41A-E3/96 | Vishay | 5,800 | DIODE GEN PURP 50V 1A DO213AB |
EGL41A-E3/97 | Vishay | 5,800 | DIODE GEN PURP 50V 1A DO213AB |
EGL41AHE3/96 | Vishay | 5,800 | DIODE GEN PURP 50V 1A DO213AB |
EGL41AHE3/97 | Vishay | 5,800 | DIODE GEN PURP 50V 1A DO213AB |
EGL41AHE3_A/H | Vishay | 5,800 | DIODE GEN PURP 50V 1A DO213AB |
EGL41AHE3_A/I | Vishay | 5,800 | DIODE GEN PURP 50V 1A DO213AB |
EGL41B-E3/96 | Vishay | 1 | DIODE GEN PURP 100V 1A DO213AB |
EGL41B-E3/97 | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO213AB |
EGL41B/1 | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO213AB |
EGL41BHE3/96 | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO213AB |
EGL41BHE3/97 | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO213AB |
EGL41BHE3_A/H | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO213AB |
EGL41BHE3_A/I | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO213AB |
EGL41C-E3/96 | Vishay | 782 | DIODE GEN PURP 150V 1A DO213AB |
EGL41C-E3/97 | Vishay | 5,800 | DIODE GEN PURP 150V 1A DO213AB |