- Manufacturer :
- Vishay
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 15pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 100 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AC, SMA
- Part Status :
- Obsolete
- Reverse Recovery Time (trr) :
- 50 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- DO-214AC (SMA)
- Voltage - DC Reverse (Vr) (Max) :
- 100 V
- Voltage - Forward (Vf) (Max) @ If :
- 1 V @ 1 A
- Datasheets
- US1BHE3/5AT
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|---|---|---|---|
| US1B | Diotec Semiconductor | 3,901,000 | DIODE UFR SMA 100V 1A |
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| US1B | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 100V 1A DO214AC |
| US1B M2G | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 100V 1A DO214AC |
| US1B R3G | Taiwan Semiconductor | 1,956 | DIODE GEN PURP 100V 1A DO214AC |
| US1B-13 | Diodes Incorporated | 5,800 | DIODE GEN PURP 100V 1A SMA |
| US1B-13-F | Diodes Incorporated | 467,335 | DIODE GEN PURP 100V 1A SMA |
| US1B-E3/5AT | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO214AC |
| US1B-E3/61T | Vishay | 2,915 | DIODE GEN PURP 100V 1A DO214AC |
| US1B-HF | Comchip Technology | 5,800 | RECTIFIER ULTRA FAST RECOVERY 10 |
| US1B-M3/5AT | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO214AC |
| US1B-M3/61T | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO214AC |
| US1B-TP | Micro Commercial Components (MCC) | 14,000 | DIODE GEN PURP 100V 1A DO214AC |
| US1B/1 | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO214AC |
| US1BAFC_R1_00001 | PANJIT | 5,800 | SURFACE MOUNT ULTRA FAST RECOVER |
