- Manufacturer :
- Vishay
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 175pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 16A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 50 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -65°C ~ 150°C
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 35 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- TO-263AB (D²PAK)
- Voltage - DC Reverse (Vr) (Max) :
- 50 V
- Voltage - Forward (Vf) (Max) @ If :
- 975 mV @ 16 A
- Datasheets
- FESB16ATHE3_A/P
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Part | Manufacturer | Stock | Description |
---|---|---|---|
FESB16AT-E3/45 | Vishay | 5,800 | DIODE GEN PURP 50V 16A TO263AB |
FESB16AT-E3/81 | Vishay | 5,800 | DIODE GEN PURP 50V 16A TO263AB |
FESB16ATHE3_A/I | Vishay | 5,800 | DIODE GEN PURP 50V 16A TO263AB |
FESB16BT-E3/45 | Vishay | 5,800 | DIODE GEN PURP 100V 16A TO263AB |
FESB16BT-E3/81 | Vishay | 5,800 | DIODE GEN PURP 100V 16A TO263AB |
FESB16BTHE3_A/I | Vishay | 5,800 | DIODE GEN PURP 100V 16A TO263AB |
FESB16BTHE3_A/P | Vishay | 5,800 | DIODE GEN PURP 100V 16A TO263AB |
FESB16CT-E3/45 | Vishay | 5,800 | DIODE GEN PURP 150V 16A TO263AB |
FESB16CT-E3/81 | Vishay | 5,800 | DIODE GEN PURP 150V 16A TO263AB |
FESB16CTHE3_A/I | Vishay | 5,800 | DIODE GEN PURP 150V 16A TO263AB |
FESB16CTHE3_A/P | Vishay | 5,800 | DIODE GEN PURP 150V 16A TO263AB |
FESB16DT-E3/45 | Vishay | 5,800 | DIODE GEN PURP 200V 16A TO263AB |
FESB16DT-E3/81 | Vishay | 5,800 | DIODE GEN PURP 200V 16A TO263AB |
FESB16DTHE3_A/I | Vishay | 5,800 | DIODE GEN PURP 200V 16A TO263AB |
FESB16DTHE3_A/P | Vishay | 5,800 | DIODE GEN PURP 200V 16A TO263AB |