
S12MR
- Mfr.Part #
- S12MR
- Manufacturer
- GeneSiC Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- DIODE GEN PURP REV 1KV 12A DO4
- Manufacturer :
- GeneSiC Semiconductor
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 12A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 50 V
- Diode Type :
- Standard, Reverse Polarity
- Mounting Type :
- Chassis, Stud Mount
- Operating Temperature - Junction :
- -65°C ~ 175°C
- Package / Case :
- DO-203AA, DO-4, Stud
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- DO-4
- Voltage - DC Reverse (Vr) (Max) :
- 1000 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.1 V @ 12 A
- Datasheets
- S12MR
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
S12M | GeneSiC Semiconductor | 5,800 | DIODE GEN PURP 1000V 12A DO4 |
S12MC M6 | Taiwan Semiconductor | 5,800 | DIODE SCHOTTKY DO214AB |
S12MC M6G | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 12A DO214AB |
S12MC R6 | Taiwan Semiconductor | 5,800 | DIODE SCHOTTKY DO214AB |
S12MC R6G | Taiwan Semiconductor | 5,800 | DIODE SCHOTTKY DO214AB |
S12MC R7 | Taiwan Semiconductor | 5,800 | DIODE SCHOTTKY DO214AB |
S12MC R7G | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 1KV 12A DO214AB |
S12MC V6G | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 12A DO214AB |
S12MC V7G | Taiwan Semiconductor | 5,100 | DIODE GEN PURP 1KV 12A DO214AB |
S12MCH | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 1KV 12A DO214AB |
S12MCHM6G | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 12A DO214AB |
S12MCHR7G | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 1KV 12A DO214AB |
S12MCHV7G | Taiwan Semiconductor | 2,400 | DIODE GEN PURP 1KV 12A DO214AB |
S12ME1FY | Sharp Microelectronics | 5,800 | OPTOISOLATOR 4KV SCR 6DIP |