- Manufacturer :
- Vishay
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 15pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 5 µA @ 200 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -65°C ~ 175°C
- Package / Case :
- DO-214BA
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 50 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- DO-214BA (GF1)
- Voltage - DC Reverse (Vr) (Max) :
- 200 V
- Voltage - Forward (Vf) (Max) @ If :
- 1 V @ 1 A
- Datasheets
- EGF1D-E3/5CA
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Part | Manufacturer | Stock | Description |
---|---|---|---|
EGF1A | Rochester Electronics | 6,017 | RECTIFIER DIODE, 1A, 50V, DO-214 |
EGF1A | onsemi | 5,800 | DIODE GEN PURP 50V 1A SMA |
EGF1A-E3/5CA | Vishay | 5,800 | DIODE GEN PURP 50V 1A DO214BA |
EGF1A-E3/67A | Vishay | 13,009 | DIODE GEN PURP 50V 1A DO214BA |
EGF1AHE3/5CA | Vishay | 5,800 | DIODE GEN PURP 50V 1A DO214BA |
EGF1AHE3/67A | Vishay | 5,800 | DIODE GEN PURP 50V 1A DO214BA |
EGF1AHE3_A/H | Vishay | 5,800 | DIODE GEN PURP 50V 1A DO214BA |
EGF1AHE3_A/I | Vishay | 5,800 | DIODE GEN PURP 50V 1A DO214BA |
EGF1B | onsemi | 20,088 | DIODE GEN PURP 100V 1A SMA |
EGF1B-1HE3/5CA | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO214BA |
EGF1B-1HE3/67A | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO214BA |
EGF1B-1HE3_A/H | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO214BA |
EGF1B-1HE3_A/I | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO214BA |
EGF1B-1HE3_B/H | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO214BA |
EGF1B-1HE3_B/I | Vishay | 5,800 | DIODE GEN PURP 100V 1A DO214BA |