- Manufacturer :
- Vishay
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 34pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 3A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 600 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AB, SMC
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 250 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- DO-214AB (SMC)
- Voltage - DC Reverse (Vr) (Max) :
- 600 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.3 V @ 2.5 A
- Datasheets
- RS3J-M3/57T
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| RS3J M6 | Taiwan Semiconductor | 5,800 | DIODE GENERAL PURPOSE DO214AB |
| RS3J M6G | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J R6 | Taiwan Semiconductor | 5,800 | DIODE GENERAL PURPOSE DO214AB |
| RS3J R6G | Taiwan Semiconductor | 5,800 | DIODE GENERAL PURPOSE DO214AB |
| RS3J R7 | Taiwan Semiconductor | 5,800 | DIODE GENERAL PURPOSE DO214AB |
| RS3J R7G | Taiwan Semiconductor | 825 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J V6G | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J V7G | Taiwan Semiconductor | 1,401 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J-13 | Diodes Incorporated | 5,800 | DIODE GEN PURP 600V 3A SMC |
| RS3J-13-F | Diodes Incorporated | 2 | DIODE GEN PURP 600V 3A SMC |
| RS3J-E3/57T | Vishay | 700 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J-E3/9AT | Vishay | 31 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J-M3/9AT | Vishay | 5,800 | DIODE GEN PURP 600V 3A DO214AB |
| RS3JB-13 | Diodes Incorporated | 5,800 | DIODE GEN PURP 600V 3A SMB |
| RS3JB-13-F | Diodes Incorporated | 10,985 | DIODE GEN PURP 600V 3A SMB |
