- Manufacturer :
- PANJIT
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 1 µA @ 200 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AC, SMA
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 35 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- SMA (DO-214AC)
- Voltage - DC Reverse (Vr) (Max) :
- 200 V
- Voltage - Forward (Vf) (Max) @ If :
- 950 mV @ 1 A
- Datasheets
- ES1DWG_R1_00001
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|---|---|---|---|
| ES1D | Rochester Electronics | 1,306,030 | RECTIFIER DIODE, 1A, 200V, DO-21 |
| ES1D | onsemi | 5,800 | DIODE GEN PURP 200V 1A SMA |
| ES1D | SURGE | 5,800 | 1A -200V - SMA (DO-214AC) - RECT |
| ES1D | DComponents | 60 | SF Rect, 200V, 1.00A, 15ns |
| ES1D M2G | Taiwan Semiconductor | 5,800 | DIODE GEN PURP 200V 1A DO214AC |
| ES1D R3G | Taiwan Semiconductor | 3,600 | DIODE GEN PURP 200V 1A DO214AC |
| ES1D-13 | Diodes Incorporated | 5,800 | DIODE GEN PURP 200V 1A SMA |
| ES1D-13-F | Diodes Incorporated | 618,591 | DIODE GEN PURP 200V 1A SMA |
| ES1D-E3/5AT | Vishay | 5,800 | DIODE GEN PURP 200V 1A DO214AC |
| ES1D-E3/61T | Vishay | 25,884 | DIODE GEN PURP 200V 1A DO214AC |
| ES1D-F080 | Rochester Electronics | 75,000 | ES1D - RECTIFIER DIODE, 1A, 200V |
| ES1D-F1-0000HF | YANGJIE | 5,800 | DIODE GEN PURP 200V 1A DO214AC |
| ES1D-HF | Comchip Technology | 3,565 | RECTIFIER SUPER FAST RECOVERY 20 |
| ES1D-LTP | Micro Commercial Components (MCC) | 4,890 | DIODE GEN PURP 200V 1A DO214AC |
| ES1D-M3/5AT | Vishay | 5,800 | DIODE GEN PURP 200V 1A DO214AC |
