- Manufacturer :
 - onsemi
 
- Product Category :
 - Diodes - Rectifiers - Single
 
- Capacitance @ Vr, F :
 - -
 
- Current - Average Rectified (Io) :
 - 2A
 
- Current - Reverse Leakage @ Vr :
 - 2 µA @ 100 V
 
- Diode Type :
 - Standard
 
- Mounting Type :
 - Surface Mount
 
- Operating Temperature - Junction :
 - -65°C ~ 175°C
 
- Package / Case :
 - DO-214AA, SMB
 
- Part Status :
 - Active
 
- Reverse Recovery Time (trr) :
 - 35 ns
 
- Speed :
 - Fast Recovery =< 500ns, > 200mA (Io)
 
- Supplier Device Package :
 - SMB
 
- Voltage - DC Reverse (Vr) (Max) :
 - 100 V
 
- Voltage - Forward (Vf) (Max) @ If :
 - 875 mV @ 1 A
 
- Datasheets
 - MURS110T3G
 
Manufacturer related products
Catalog related products
related products
| Part | Manufacturer | Stock | Description | 
|---|---|---|---|
| MURS105T3 | onsemi | 5,800 | DIODE GEN PURP 50V 2A SMB | 
| MURS105T3G | onsemi | 5,800 | DIODE GEN PURP 50V 2A SMB | 
| MURS110T3 | Rochester Electronics | 5,800 | DIODE ULTRA FAST 1A 100V SMB | 
| MURS115T3 | Rochester Electronics | 5,800 | DIODE ULTRA FAST 1A 150V SMB | 
| MURS115T3G | onsemi | 4 | DIODE GEN PURP 150V 2A SMB | 
| MURS120-13 | Diodes Incorporated | 5,800 | DIODE GEN PURP 200V 1A SMB | 
| MURS120-13-F | Diodes Incorporated | 5,800 | DIODE GEN PURP 200V 1A SMB | 
| MURS120-E3/52T | Vishay | 5,800 | DIODE GP 200V 1A DO214AA | 
| MURS120-E3/5BT | Vishay | 5,800 | DIODE GEN PURP 200V 2A DO214AA | 
| MURS120-F1-0000HF | YANGJIE | 5,800 | DIODE GEN PURP 200V 1A DO214AC | 
| MURS120-M3/52T | Vishay | 5,800 | DIODE GEN PURP 200V 1A DO214AA | 
| MURS120-M3/5BT | Vishay | 5,800 | DIODE GEN PURP 200V 1A DO214AA | 
| MURS120/2 | Vishay | 5,800 | DIODE GEN PURP 200V 2A DO214AA | 
| MURS120B-F1-0000HF | YANGJIE | 5,800 | DIODE GEN PURP 200V 1A DO214AA | 
| MURS120HE3/52T | Vishay | 5,800 | DIODE GEN PURP 200V 2A DO214AA | 



                                                                                                                    




