MURTA20060R

Mfr.Part #
MURTA20060R
Manufacturer
GeneSiC Semiconductor
Package/Case
-
Datasheet
Download
Description
DIODE GEN PURP 600V 100A 3 TOWER
Manufacturer :
GeneSiC Semiconductor
Product Category :
Diodes - Rectifiers - Arrays
Current - Average Rectified (Io) (per Diode) :
100A
Current - Reverse Leakage @ Vr :
25 µA @ 600 V
Diode Configuration :
1 Pair Common Anode
Diode Type :
Standard
Mounting Type :
Chassis Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
Three Tower
Part Status :
Active
Reverse Recovery Time (trr) :
-
Speed :
Standard Recovery >500ns, > 200mA (Io)
Supplier Device Package :
Three Tower
Voltage - DC Reverse (Vr) (Max) :
600 V
Voltage - Forward (Vf) (Max) @ If :
1.7 V @ 100 A
Datasheets
MURTA20060R

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