DBB08G-TM-E

Mfr.Part #
DBB08G-TM-E
Manufacturer
onsemi
Package/Case
-
Datasheet
Download
Description
BRIDGE RECT 1P 600V 800MA 4SMD
Manufacturer :
onsemi
Product Category :
Diodes - Bridge Rectifiers
Current - Average Rectified (Io) :
800 mA
Current - Reverse Leakage @ Vr :
10 µA @ 600 V
Diode Type :
Single Phase
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
4-SMD, Gull Wing
Part Status :
Obsolete
Supplier Device Package :
4-SMD
Technology :
Standard
Voltage - Forward (Vf) (Max) @ If :
1.05 V @ 400 mA
Voltage - Peak Reverse (Max) :
600 V
Datasheets
DBB08G-TM-E

Manufacturer related products

Catalog related products

  • Taiwan Semiconductor
    DIODE BRIDGE 8A 50V TS-6P
  • Taiwan Semiconductor
    DIODE BRIDGE 8A 200V KBU
  • Taiwan Semiconductor
    DIODE BRIDGE 2A 200V DBL
  • Taiwan Semiconductor
    DIODE BRIDGE 4A 50V KBL
  • Taiwan Semiconductor
    DIODE BRIDGE 15A 50V TS-6P

related products

Part Manufacturer Stock Description
DBB01C724 Carlo Gavazzi 5,800 RELAY TIME DELAY 600SEC 8A 250V
DBB01CM24 Carlo Gavazzi 5,800 RELAY TIME DELAY SPDT ON RELEASE
DBB01D724 Carlo Gavazzi 5,800 RELAY TIME DELAY 600SEC 8A 250V
DBB01DM24 Carlo Gavazzi 5,800 RELAY TIME DELAY DPDT ON RELEASE
DBB02CM24 Carlo Gavazzi 5 RELAY TIME DELAY 10HRS 8A 250V
DBB02DM24 Carlo Gavazzi 5,800 RELAY TIME DELAY DPDT ON RELEASE
DBB03AIPM Rochester Electronics 479 IC DGTL BSBND DOLPH CHIP 64LQFP
DBB03AIPMR Texas Instruments 5,800 IC DGTL BSBND DOLPH CHIP 64LQFP
DBB03IPM Texas Instruments 5,800 IC DGTL BSBND DOLPH CHIP 64LQFP
DBB03IPMR Texas Instruments 5,800 IC DGTL BSBND DOLPH CHIP 64LQFP
DBB04G Rochester Electronics 19,319 BRIDGE RECT 1PHASE 600V 400MA
DBB08C-TM-E Rochester Electronics 43,500 REC 0.8A 200V BRIDGE