- Manufacturer:
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- onsemi (1)
- Operating Temperature:
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- Power - Max:
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- Supplier Device Package:
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- Reverse Recovery Time (trr):
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- Current - Collector (Ic) (Max):
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- Voltage - Collector Emitter Breakdown (Max):
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- Vce(on) (Max) @ Vge, Ic:
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- Current - Collector Pulsed (Icm):
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- Switching Energy:
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- Gate Charge:
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- Td (on/off) @ 25°C:
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- Test Condition:
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34 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
---|---|---|---|---|---|---|
Infineon Technologies | IC DISCRETE 600V T... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IC DISCRETE 600V T... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IC DISCRETE 600V T... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IC DISCRETE 600V T... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IC DISCRETE 600V T... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IC DISCRETE 600V T... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IC DISCRETE 600V T... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IC DISCRETE 600V T... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IC DISCRETE 600V T... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IGBT TRENCH/FS 600... |
636 | 5,800 | Get Quote | ||
Infineon Technologies | HOME APPLIANCES ... |
3,000 | 5,800 | Get Quote | ||
Infineon Technologies | IKD04N60RC2ATMA1 |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IGBT TRENCH/FS 600... |
393 | 5,800 | Get Quote | ||
ROHM Semiconductor | IGBT |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IGBT 600V 30A TO252-3 |
1 | 5,800 | Get Quote | ||
onsemi | IGBT 1200V 5A FS3 DP... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IGBT 600V 20A 150W PG... |
1 | 2,083 | Get Quote | ||
Infineon Technologies | IGBT TRENCH/FS 600... |
1 | 2,043 | Get Quote | ||
Infineon Technologies | IGBT TRENCH/FS 600... |
1 | 2,056 | Get Quote | ||
Infineon Technologies | IGD15N65T6ARMA1 |
1 | 2,880 | Get Quote |