Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Drive Voltage (Max Rds On, Min Rds On):
Vgs (Max):
Image Part Manufacturer Description MOQ Stock
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XPN12006NC,L1XHQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 60V 20A...
1 5,800 Get Quote
XPW4R10ANB,L1XHQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 100V 70A...
1 5,800 Get Quote
TW070J120B,S1Q Toshiba Electronic Devices and Storage Corporation
SICFET N-CH 1200V 36...
1 122 Get Quote
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