FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Vgs (Max):
Image Part Manufacturer Description MOQ Stock
Online Service
IPW65R125C7XKSA1 Rochester Electronics
MOSFET N-CH 650V 18A...
117 5,800 Get Quote
RM12N650IP Rectron USA
MOSFET N-CH 650V 11....
40,000 5,800 Get Quote
RM12N650T2 Rectron USA
MOSFET N-CH 650V 11....
5,000 5,800 Get Quote
IPP65R125C7XKSA1 Rochester Electronics
MOSFET N-CH 650V 18A...
1 2,739 Get Quote
IPW80R280P7XKSA1 Infineon Technologies
MOSFET N-CH 800V 17A...
1 5,800 Get Quote
IPP80R280P7XKSA1 Infineon Technologies
MOSFET N-CH 800V 17A...
1 142 Get Quote
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