Operating Temperature:
Supplier Device Package:
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Vgs (Max):
Image Part Manufacturer Description MOQ Stock
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TK12J60W,S1VE(S Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 600V 11....
1 5,800 Get Quote
TK7E80W,S1X Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 800V 6.5...
50 5,800 Get Quote
TK12E60W,S1VX Toshiba Electronic Devices and Storage Corporation
MOSFET N CH 600V 11....
50 5,800 Get Quote
TK58E06N1,S1X Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 60V 58A...
1 26 Get Quote
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