Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Drive Voltage (Max Rds On, Min Rds On):
Image Part Manufacturer Description MOQ Stock
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IMBG120R090M1HXTMA1 Infineon Technologies
SICFET N-CH 1.2KV 2...
1 5,800 Get Quote
IMZ120R090M1HXKSA1 Infineon Technologies
SICFET N-CH 1.2KV 2...
1 5,800 Get Quote
IMW120R090M1HXKSA1 Infineon Technologies
SICFET N-CH 1.2KV 2...
1 64 Get Quote
IMZA65R083M1HXKSA1 Infineon Technologies
SILICON CARBIDE ...
1 220 Get Quote
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