- Operating Temperature：
-
- Supplier Device Package：
-
- Power Dissipation (Max)：
-
- FET Type：
-
- Rds On (Max) @ Id, Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Drive Voltage (Max Rds On, Min Rds On)：
-
47 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
onsemi | MOSFET N-CH 50V 200M... |
1 | 5,800 | Get Quote | |
|
|
Nexperia | MOSFET N-CH 60V 200M... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 50V 200M... |
1 | 5,800 | Get Quote | |
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 200M... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 60V 200M... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 60V 200M... |
1 | 5,800 | Get Quote | |
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 200M... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 60V 200M... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 50V 200M... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 60V 200M... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 60V 200M... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 60V 200M... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 60V 200M... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 60V 200M... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 50V 200M... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 60V 200M... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 50V 200M... |
1 | 5,800 | Get Quote | |
|
|
ROHM Semiconductor | MOSFET N-CH 30V 200M... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 50V 200M... |
1 | 5,800 | Get Quote | |
|
|
YANGJIE | N-CH MOSFET 100V 0.2... |
1 | 5,800 | Get Quote |
