- Part Status:
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- Operating Temperature:
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- Mounting Type:
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- Package / Case:
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- Supplier Device Package:
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- Power Dissipation (Max):
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- FET Type:
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- Drain to Source Voltage (Vdss):
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- Rds On (Max) @ Id, Vgs:
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- Vgs(th) (Max) @ Id:
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- Gate Charge (Qg) (Max) @ Vgs:
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- Input Capacitance (Ciss) (Max) @ Vds:
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- Drive Voltage (Max Rds On, Min Rds On):
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25 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
---|---|---|---|---|---|---|
Infineon Technologies | MOSFET N-CH 55V 5.2A... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 55V 5.2A... |
1 | 5,800 | Get Quote | ||
Vishay | MOSFET P-CH 8V 5.2A... |
1 | 5,800 | Get Quote | ||
Vishay | MOSFET P-CH 20V 5.2A... |
1 | 5,800 | Get Quote | ||
onsemi | MOSFET N-CH 30V 5.2A... |
1 | 5,800 | Get Quote | ||
Diodes Incorporated | MOSFET N-CH 30V 5.2A... |
1 | 5,800 | Get Quote | ||
onsemi | MOSFET N-CH 100V 5.2... |
1 | 5,800 | Get Quote | ||
Vishay | MOSFET P-CH 8V 5.2A... |
1 | 5,800 | Get Quote | ||
Vishay | MOSFET P-CH 20V 5.2A... |
1 | 5,800 | Get Quote | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 20V 5.2A... |
1 | 5,800 | Get Quote | ||
onsemi | MOSFET P-CH 8V 5.2A... |
1,603 | 12,000 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 55V 5.2A... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 150V 5.2... |
1 | 5,800 | Get Quote | ||
onsemi | MOSFET N-CH 30V 5.2A... |
1 | 5,800 | Get Quote | ||
NXP Semiconductors | MOSFET N-CH 30V 5.2A... |
2,404 | 882,178 | Get Quote | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 5.2... |
75 | 5,800 | Get Quote | ||
Diodes Incorporated | MOSFET N-CH 50V 5.2A... |
2,500 | 5,800 | Get Quote | ||
PANJIT | 20V P-CHANNEL ENHA... |
1 | 5,800 | Get Quote | ||
PANJIT | 20V P-CHANNEL ENHA... |
1 | 5,800 | Get Quote | ||
PANJIT | SOT-23, MOSFET |
1 | 5,800 | Get Quote |