FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Image Part Manufacturer Description MOQ Stock
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TK5P60W,RVQ Toshiba Electronic Devices and Storage Corporation
MOSFET N CH 600V 5.4...
1 17,830 Get Quote
TK560P60Y,RQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CHANNEL...
1 7,147 Get Quote
TK560P65Y,RQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CHANNEL...
1 3,673 Get Quote
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