Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock
Online Service
IPD65R1K4CFDATMA1 Infineon Technologies
MOSFET N-CH 650V 2.8...
2,500 5,800 Get Quote
IPD70R1K4CEAUMA1 Infineon Technologies
MOSFET N-CH 700V 5.4...
1 5,800 Get Quote
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