- Operating Temperature：
-
- Supplier Device Package：
-
- Power Dissipation (Max)：
-
- Drain to Source Voltage (Vdss)：
-
- Current - Continuous Drain (Id) @ 25°C：
-
- Rds On (Max) @ Id, Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
66 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET N-CH 650V 10.... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 5.8... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 7A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 8.3... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 10.... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 13.... |
281 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 20.... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 600V 15.... |
283 | 5,800 | Get Quote | |
|
|
Rochester Electronics | HIGH POWER_LEGAC... |
181 | 5,800 | Get Quote | |
|
|
UnitedSiC | SICFET N-CH 650V 18A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 21.... |
3,000 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 21.... |
145 | 5,800 | Get Quote | |
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET N-CH 600V 3.6... |
3,500 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 10.... |
239 | 4,241 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 12A... |
3,000 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 11.... |
210 | 47,646 | Get Quote | |
|
|
onsemi | MOSFET N-CH 650V 12A... |
3,000 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 600V 9A... |
260 | 44,006 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 600V 22.... |
3,000 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 16.... |
3,000 | 5,800 | Get Quote |
