- Operating Temperature：
-
- Supplier Device Package：
-
- FET Type：
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- Drain to Source Voltage (Vdss)：
-
- Current - Continuous Drain (Id) @ 25°C：
-
- Rds On (Max) @ Id, Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
-
- Drive Voltage (Max Rds On, Min Rds On)：
-
13 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Taiwan Semiconductor | MOSFET N-CH 700V 4.5... |
15,000 | 5,800 | Get Quote | |
|
|
Rochester Electronics | IRFU3707 - HEXFET N... |
521 | 5,800 | Get Quote | |
|
|
Rochester Electronics | N-CHANNEL POWER M... |
376 | 5,800 | Get Quote | |
|
|
Rochester Electronics | N-CHANNEL POWER M... |
898 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 200V 7.8... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET P-CH 400V 1.8... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET P-CH 250V 2.7... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | N-CHANNEL POWER M... |
740 | 1,000 | Get Quote | |
|
|
Rochester Electronics | N-CHANNEL POWER M... |
900 | 900 | Get Quote | |
|
|
Rochester Electronics | N-CHANNEL POWER M... |
900 | 900 | Get Quote | |
|
|
Taiwan Semiconductor | MOSFET N-CH 600V 4A... |
1 | 8,560 | Get Quote | |
|
|
Rochester Electronics | N-CHANNEL POWER M... |
760 | 2,419 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 700V 10A... |
1 | 1,612 | Get Quote |
