- Manufacturer：
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- onsemi (3)
- Operating Temperature：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- FET Feature：
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- Drain to Source Voltage (Vdss)：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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18 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
STMicroelectronics | MOSFET N-CH 525V 4A... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 1050V 4A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 600V 4A... |
5,040 | 5,800 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 800V 4A... |
3,000 | 5,800 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 650V 4A... |
3,000 | 5,800 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 650V 4A... |
3,000 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 500V 4A... |
5,040 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 500V 4A... |
5,040 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 950V 4A... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 950V 4A... |
1 | 2 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 700V 4A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 700V 4A... |
1 | 182 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 650V 4A... |
1 | 645 | Get Quote | |
|
|
Rochester Electronics | N-CHANNEL POWER M... |
1,424 | 1,424 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 800V 4A... |
1 | 1,455 | Get Quote | |
|
|
Taiwan Semiconductor | MOSFET N-CHANNEL... |
1 | 14,059 | Get Quote | |
|
|
Taiwan Semiconductor | MOSFET N-CH 600V 4A... |
1 | 8,560 | Get Quote | |
|
|
Taiwan Semiconductor | MOSFET N-CHANNEL... |
1 | 10,528 | Get Quote |
