- Operating Temperature：
-
- Supplier Device Package：
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- Power Dissipation (Max)：
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- Current - Continuous Drain (Id) @ 25°C：
-
- Rds On (Max) @ Id, Vgs：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
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25 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
STMicroelectronics | MOSFET N-CH 600V 5.5... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | POWER FIELD-EFFE... |
869 | 5,800 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 600V 10A... |
1 | 3 | Get Quote | |
|
|
Vishay | MOSFET N-CH 600V 7A... |
3,000 | 5,800 | Get Quote | |
|
|
Taiwan Semiconductor | MOSFET N-CHANNEL... |
15,000 | 5,800 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 600V 9A... |
3,000 | 5,800 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 600V 11A... |
3,000 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET N-CH 600V 7A... |
3,000 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET N-CH 600V 1.4... |
3,000 | 5,800 | Get Quote | |
|
|
Rochester Electronics | N-CHANNEL POWER ... |
5 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 600V 1.9... |
1 | 5,800 | Get Quote | |
|
|
Taiwan Semiconductor | MOSFET N-CHANNEL... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET N-CH 600V 2A... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | NDD60N745 - POWER MO... |
431 | 26,625 | Get Quote | |
|
|
Taiwan Semiconductor | MOSFET N-CH 600V 9.5... |
1 | 3,726 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 600V 5.5... |
1 | 2,990 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 600V 4.5... |
1 | 3,634 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 600V 5A... |
1 | 6,000 | Get Quote | |
|
|
Rochester Electronics | N-CHANNEL POWER ... |
2,404 | 30,809 | Get Quote | |
|
|
Rochester Electronics | N-CHANNEL POWER ... |
1,031 | 1,869 | Get Quote |
