- Operating Temperature:
-
- Supplier Device Package:
-
- Power Dissipation (Max):
-
- FET Type:
-
- Rds On (Max) @ Id, Vgs:
-
- Vgs(th) (Max) @ Id:
-
- Gate Charge (Qg) (Max) @ Vgs:
-
- Input Capacitance (Ciss) (Max) @ Vds:
-
- Drive Voltage (Max Rds On, Min Rds On):
-
24 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
---|---|---|---|---|---|---|
onsemi | MOSFET N-CH 55V 2.6A... |
1,093 | 5,800 | Get Quote | ||
onsemi | MOSFET N-CH 59V 2.6A... |
1 | 5,800 | Get Quote | ||
onsemi | MOSFET N-CH 59V 2.6A... |
1 | 5,800 | Get Quote | ||
onsemi | MOSFET N-CH 59V 2.6A... |
263 | 5,800 | Get Quote | ||
onsemi | MOSFET N-CH 55V 2.6A... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 60V 2.6A... |
1,501 | 5,622,900 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 150V 2.6... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 60V 2.6A... |
1 | 5,800 | Get Quote | ||
onsemi | MOSFET N-CH 52V 2.6A... |
740 | 5,839 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 150V 2.6... |
1 | 5,800 | Get Quote | ||
onsemi | MOSFET N-CH 59V 2.6A... |
505 | 5,800 | Get Quote | ||
onsemi | MOSFET N-CH 52V 2.6A... |
1 | 5,800 | Get Quote | ||
onsemi | MOSFET N-CH 59V 2.6A... |
596 | 5,800 | Get Quote | ||
Diodes Incorporated | MOSFET P-CH 70V 2.6A... |
4,000 | 5,800 | Get Quote | ||
Rochester Electronics | HEXFET POWER MOS... |
959 | 5,800 | Get Quote | ||
PANJIT | 100V P-CHANNEL ENH... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 150V 2.6... |
1 | 5,800 | Get Quote | ||
onsemi | MOSFET N-CH 59V 2.6A... |
1 | 5,800 | Get Quote | ||
onsemi | MOSFET P-CH 60V 2.6A... |
1 | 5,800 | Get Quote | ||
Diodes Incorporated | MOSFET P-CH 70V 2.6A... |
1 | 5,800 | Get Quote |