- Part Status:
-
- Operating Temperature:
-
- Technology:
-
- Supplier Device Package:
-
- Power Dissipation (Max):
-
- FET Type:
-
- Current - Continuous Drain (Id) @ 25°C:
-
- Rds On (Max) @ Id, Vgs:
-
- Vgs(th) (Max) @ Id:
-
- Gate Charge (Qg) (Max) @ Vgs:
-
- Input Capacitance (Ciss) (Max) @ Vds:
-
21 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
---|---|---|---|---|---|---|
Vishay | MOSFET N-CH 20V 4.3A... |
1 | 5,800 | Get Quote | ||
Vishay | MOSFET N-CH 60V 7A ... |
1 | 5,800 | Get Quote | ||
Vishay | MOSFET N-CH 40V 8A ... |
1 | 5,800 | Get Quote | ||
Vishay | MOSFET P-CH 200V 0.9... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 30V 3.5A... |
1,255 | 3,000 | Get Quote | ||
Vishay | MOSFET N-CH 30V 5A ... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 150V 0.9... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET P-CH 20V 4.4A... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | SINGLE P-CHANNEL... |
1,352 | 5,800 | Get Quote | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 30V 4.5A... |
3,000 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET P-CH 20V 1.65... |
1,984 | 5,800 | Get Quote | ||
Diodes Incorporated | MOSFET N-CH 6.8A TS... |
3,000 | 5,800 | Get Quote | ||
Diodes Incorporated | MOSFET N-CH 6.8A TS... |
10,000 | 5,800 | Get Quote | ||
onsemi | MOSFET P-CH 20V 3.1A... |
3,000 | 5,800 | Get Quote | ||
ROHM Semiconductor | MOSFET P-CH 30V 3A ... |
1 | 2,019 | Get Quote | ||
Rochester Electronics | 4.4A, 20V, P-CHANNEL... |
275 | 12,696 | Get Quote | ||
Rochester Electronics | N-CHANNEL MOSFET |
1,519 | 3,000 | Get Quote | ||
Rochester Electronics | N-CHANNL SILICON... |
1,069 | 24,000 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 60V 2A ... |
2,061 | 91,923 | Get Quote | ||
Rochester Electronics | P-CHANNEL SILICO... |
1,803 | 5,776 | Get Quote |