- Part Status：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- FET Type：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Drive Voltage (Max Rds On, Min Rds On)：
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83 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Renesas Electronics Corporation | MOSFET N-CH 500V 6A... |
1 | 5,800 | Get Quote | |
|
|
Renesas Electronics Corporation | MOSFET N-CH 600V 5A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 30V 8.8A... |
1 | 5,800 | Get Quote | |
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 3.5... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET P-CH 60V 7.8A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET P-CH 60V 9.7A... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET N-CH 400V 5.5... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET N-CH 400V 5.5... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 600V 800... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 30V 3.7A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 600V 4.6... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 10A... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 100V 10A... |
84 | 930 | Get Quote | |
|
|
Vishay | MOSFET N-CH 400V 5.5... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET N-CH 400V 5.5... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 60V 15A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 50V 15A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 60V 15A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 50V 15A... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET N-CH 400V 5.5... |
1 | 5,800 | Get Quote |
