- Part Status：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- FET Type：
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- FET Feature：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Drive Voltage (Max Rds On, Min Rds On)：
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58 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
NXP Semiconductors | MOSFET N-CH 55V 10.3... |
1 | 5,800 | Get Quote | |
|
|
ROHM Semiconductor | MOSFET N-CH 200V 5A... |
1 | 5,800 | Get Quote | |
|
|
Nexperia | MOSFET N-CH 55V 5.5A... |
638 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET P-CH 30V 1.5A... |
1 | 5,800 | Get Quote | |
|
|
NXP Semiconductors | MOSFET N-CH 55V 5.5A... |
1 | 5,800 | Get Quote | |
|
|
NXP Semiconductors | MOSFET N-CH 55V 2.5A... |
1,443 | 355,055 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 9.4... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 9.4... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 9.7... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET P-CH 30V 2.9A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 9.4... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 100V 9.4... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 150V 1.9... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 55V 2.8A... |
1,608 | 4,000 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 9.7... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 9.7... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 150V 1.9... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 200V 4.6... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 30V 4A ... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 9.7... |
1 | 5,800 | Get Quote |
