- Part Status：
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- Operating Temperature：
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- Mounting Type：
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- Package / Case：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- FET Type：
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- FET Feature：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Drive Voltage (Max Rds On, Min Rds On)：
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19 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
onsemi | MOSFET N-CH 100V 7.3... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 100V 5.8... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 100V 7.3... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 100V 5.8... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 100V 5.5... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 100V 7.3... |
1 | 5,800 | Get Quote | |
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 20V 2.7A... |
1 | 5,800 | Get Quote | |
|
|
ROHM Semiconductor | MOSFET P-CH 30V 3A ... |
1 | 5,800 | Get Quote | |
|
|
Nexperia | MOSFET N-CH 55V 11A... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | POWER FIELD-EFFE... |
1,291 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT200V18A... |
1 | 5,800 | Get Quote | |
|
|
Central Semiconductor | MOSFET N-CH 100V 2A... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 200V 5A... |
1 | 5,800 | Get Quote | |
|
|
Nexperia | MOSFET N-CH 60V 17A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 100V 5.8... |
1 | 430 | Get Quote | |
|
|
ROHM Semiconductor | MOSFET P-CH 30V 3A ... |
1 | 1,650 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 100V 7.3... |
1,031 | 4,000 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 100V 5.5... |
1,110 | 5,887 | Get Quote | |
|
|
onsemi | MOSFET N-CH 100V 1.7... |
1 | 771 | Get Quote |
