- Manufacturer：
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- onsemi (2)
- Operating Temperature：
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- Mounting Type：
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- Package / Case：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- FET Feature：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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25 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET N-CH 600V 4.3... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 600V 4.4... |
802 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N CH 500V 5A... |
1,501 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N CH 500V 5A... |
1,501 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 500V 5A... |
934 | 2,590 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 600V 4.4... |
643 | 25,804 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 600V 4.3... |
1,443 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 600V 4.3... |
1,407 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 600V 4.4... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 600V 4.4... |
722 | 78,139 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 600V 4.4... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | IPN60R1K0CEATMA1 - ... |
1,310 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 40V 35A... |
3,000 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 650V 5.2... |
371 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 600V 6.8... |
500 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 40V 35A... |
3,000 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 600V 4.3... |
1,165 | 1,599 | Get Quote | |
|
|
Infineon Technologies | CONSUMER |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | CONSUMER |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 500V 7.6... |
1 | 2 | Get Quote |
