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- Part Status：
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- Package / Case：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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19 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Rochester Electronics | MOSFET N-CH 650V 22.... |
205 | 12,959 | Get Quote | |
|
|
Rochester Electronics | HIGH POWER_LEGAC... |
154 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 22.... |
40 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 650V 22.... |
98 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 21.... |
3,000 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 21.... |
145 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 22.... |
240 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 22.... |
1,000 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 22.... |
500 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 600V 38A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 22.... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 22.... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 22.... |
1,000 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 22.... |
1 | 42 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 600V 52A... |
1 | 281 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 600V 61A... |
1 | 1,340 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 38A... |
1 | 726 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 22.... |
1 | 200 | Get Quote | |
|
|
Toshiba Electronic Devices and Storage Corporation | X35 PB-F POWER MOS... |
1 | 200 | Get Quote |
