Supplier Device Package:
Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Drive Voltage (Max Rds On, Min Rds On):
Vgs (Max):
Image Part Manufacturer Description MOQ Stock
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SI4004DY-T1-GE3 Vishay
MOSFET N-CH 20V 12A...
1 5,800 Get Quote
IRF7807ZPBF Rochester Electronics
MOSFET N-CH 30V 11A...
1,185 1,710 Get Quote
IRF7807Z Infineon Technologies
MOSFET N-CH 30V 11A...
1 5,800 Get Quote
IRF7807ZTR Infineon Technologies
MOSFET N-CH 30V 11A...
1 5,800 Get Quote
IRF7807ZPBF Rochester Electronics
MOSFET N-CH 30V 11A...
1,000 5,800 Get Quote
TK22A10N1,S4X Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 100V 22A...
1 35 Get Quote
TK22E10N1,S1X Toshiba Electronic Devices and Storage Corporation
MOSFET N CH 100V 52A...
1 100 Get Quote
IRF7807ZTRPBF Infineon Technologies
MOSFET N-CH 30V 11A...
1 52 Get Quote
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