- Part Status：
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- Operating Temperature：
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- Mounting Type：
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- Package / Case：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- FET Type：
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- FET Feature：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Drive Voltage (Max Rds On, Min Rds On)：
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32 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET N-CH 60V 2.9A... |
987 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 60V 2.9A... |
1 | 5,800 | Get Quote | |
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 2.9A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET P-CH 20V 2.9A... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET P-CH 20V 2.9A... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET P-CH 20V 2.9A... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET P-CH 20V 2.9A... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET N-CH 20V 2.9A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET P-CH 60V 2.9A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET P-CH 60V 2.9A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 60V 2.9A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 60V 2.9A... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 100V 2.9... |
3,000 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET P-CH 20V 2.9A... |
1 | 2,334 | Get Quote | |
|
|
Vishay | MOSFET N-CH 30V 2.9A... |
3,000 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 100V 2.9... |
10,000 | 5,800 | Get Quote | |
|
|
PANJIT | SOT-23, MOSFET |
1 | 5,800 | Get Quote | |
|
|
PANJIT | SOT-23, MOSFET |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET P-CH 60V 2.9A... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET N-CH 30V 2.9A... |
1 | 5,800 | Get Quote |
