- Manufacturer：
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- Operating Temperature：
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- Mounting Type：
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- Package / Case：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- Drain to Source Voltage (Vdss)：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Drive Voltage (Max Rds On, Min Rds On)：
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17 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
NXP Semiconductors | MOSFET N-CH 40V 190A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | TRENCH >=100V PG-HS... |
2,000 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 190... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 190... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 190... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 190... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 100V 190... |
83 | 5,800 | Get Quote | |
|
|
Rochester Electronics | IRFS4010 - 12V-300V N-C... |
160 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 190... |
800 | 5,800 | Get Quote | |
|
|
Rochester Electronics | AUIRFS4010 - 120V-300V... |
107 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 190... |
1,600 | 5,800 | Get Quote | |
|
|
Rochester Electronics | IRLS4030 - HEXFET P... |
16 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 100V 190... |
107 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 190... |
1 | 5,800 | Get Quote | |
|
|
Taiwan Semiconductor | MOSFET N-CHANNEL... |
1 | 700 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 190... |
1 | 358 | Get Quote | |
|
|
Rochester Electronics | AUTOMOTIVE HEXFE... |
121 | 5,800 | Get Quote |
