- Manufacturer：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- Drain to Source Voltage (Vdss)：
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- Rds On (Max) @ Id, Vgs：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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23 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET N-CH 55V 17A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 55V 17A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 55V 17A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 17A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 55V 17A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 17A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 17A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 55V 17A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 55V 17A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 17A... |
352 | 3,820 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 17A... |
3,000 | 5,800 | Get Quote | |
|
|
Rochester Electronics | HEXFET POWER MOS... |
150 | 5,800 | Get Quote | |
|
|
Rochester Electronics | HEXFET POWER MOS... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 55V 17A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 17A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 55V 17A... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 55V 17A... |
396 | 5,800 | Get Quote | |
|
|
Rochester Electronics | AUTOMOTIVE HEXFE... |
352 | 54,000 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 17A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 17A... |
1 | 2,553 | Get Quote |
