- Part Status：
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- Operating Temperature：
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- Mounting Type：
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- Package / Case：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- FET Type：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Drive Voltage (Max Rds On, Min Rds On)：
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38 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
NXP Semiconductors | MOSFET N-CH 100V 900... |
5,770 | 2,342,000 | Get Quote | |
|
|
Nexperia | MOSFET N-CHANNEL... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 20V 900M... |
1 | 2,104 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 20V 900M... |
1 | 5,800 | Get Quote | |
|
|
Nexperia | MOSFET N-CH 30V 900M... |
1 | 5,800 | Get Quote | |
|
|
Nexperia | MOSFET N-CH 30V 900M... |
1 | 5,800 | Get Quote | |
|
|
Renesas Electronics Corporation | MOSFET N-CH 350V 900... |
1 | 5,800 | Get Quote | |
|
|
NXP Semiconductors | MOSFET N-CH 100V 900... |
5,770 | 32,000 | Get Quote | |
|
|
NXP Semiconductors | MOSFET N-CH 30V 900M... |
3,606 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET P-CH 20V 900M... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 100V 900... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 100V 900... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 150V 900... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 150V 0.9... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | SMALL SIGNAL FIE... |
3,249 | 5,800 | Get Quote | |
|
|
YANGJIE | N-CH MOSFET 20V 0.9A... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 30V 900M... |
10,000 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET P-CH 60V 900M... |
1 | 5,800 | Get Quote | |
|
|
PANJIT | SOT-23, MOSFET |
1 | 5,800 | Get Quote | |
|
|
PANJIT | 20V P-CHANNEL ENHA... |
1 | 5,800 | Get Quote |
