- Manufacturer:
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- Part Status:
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- Operating Temperature:
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- Power Dissipation (Max):
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- FET Feature:
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- Drain to Source Voltage (Vdss):
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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id, Vgs:
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- Vgs(th) (Max) @ Id:
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- Gate Charge (Qg) (Max) @ Vgs:
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- Input Capacitance (Ciss) (Max) @ Vds:
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54 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
---|---|---|---|---|---|---|
Rochester Electronics | MOSFET N-CH 500V 7.6... |
810 | 810 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 500V 13A... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 500V 4.3... |
960 | 1,309 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 6.6... |
303 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 600V 6.1... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 600V 6.8... |
209 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 12A... |
191 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 500V 9A... |
388 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 550V 12A... |
285 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 7.3... |
317 | 8,500 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 3.2... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 560V 7.6... |
395 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 4.5... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 560V 11.... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 560V 4.5... |
480 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 11A... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 20.... |
105 | 1,975 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 600V 20.... |
113 | 540 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 13.... |
27 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 600V 11A... |
179 | 5,800 | Get Quote |