Power Dissipation (Max):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock
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SCT2H12NYTB ROHM Semiconductor
SICFET N-CH 1700V 4A...
1 795 Get Quote
SCT2750NYTB ROHM Semiconductor
SICFET N-CH 1700V 5....
1 400 Get Quote
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