Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock
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NDUL03N150CG Rochester Electronics
N-CHANNEL POWER M...
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TK100L60W,VQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 600V 100...
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