Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id, Vgs:
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description MOQ Stock
Online Service
IPD65R950C6ATMA1 Infineon Technologies
MOSFET N-CH 650V 4.5...
586 5,800 Get Quote
IPD65R1K0CEAUMA1 Infineon Technologies
MOSFET N-CH 650V 7.2...
2,500 5,800 Get Quote
IPD70R950CEAUMA1 Infineon Technologies
MOSFET N-CH 700V 7.4...
1 5,800 Get Quote
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