- Manufacturer：
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- Part Status：
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- Power Dissipation (Max)：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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49 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Rochester Electronics | MOSFET N-CH 600V 12A... |
314 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 600V 16.... |
248 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 46A... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | IPW60R280 - POWER FI... |
225 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 43.... |
240 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 650V 18A... |
117 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 600V 19A... |
120 | 5,800 | Get Quote | |
|
|
Rochester Electronics | 75A, 650V, 0.019OHM, N-C... |
13 | 5,800 | Get Quote | |
|
|
Rochester Electronics | HIGH POWER_LEGAC... |
37 | 5,800 | Get Quote | |
|
|
Rochester Electronics | HIGH POWER_NEW |
63 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 600V 31A... |
10 | 5,800 | Get Quote | |
|
|
Rochester Electronics | 600V, 0.07OHM, N-CHAN... |
75 | 5,800 | Get Quote | |
|
|
Infineon Technologies | 650 V COOLMOS CFD7 ... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 68.... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 600V 13.... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | HIGH POWER_NEW |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | HIGH POWER_NEW |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 650V 13A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | 650V FET COOLMOS T... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 600V 35A... |
1 | 5,800 | Get Quote |
