- Manufacturer:
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- Part Status:
-
- Power Dissipation (Max):
-
- FET Feature:
-
- Drain to Source Voltage (Vdss):
-
- Current - Continuous Drain (Id) @ 25°C:
-
- Rds On (Max) @ Id, Vgs:
-
- Vgs(th) (Max) @ Id:
-
- Gate Charge (Qg) (Max) @ Vgs:
-
- Input Capacitance (Ciss) (Max) @ Vds:
-
74 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
---|---|---|---|---|---|---|
Rochester Electronics | HIGH POWER_LEGAC... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | IPW90R1 - 900V COOLM... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 500V 18.... |
347 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 700V 6A... |
327 | 14,517 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 11.... |
198 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 13.... |
211 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 20.... |
173 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 20.... |
173 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 13.... |
210 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 500V 13A... |
354 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 600V 13.... |
186 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 13.... |
152 | 720 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 6.6... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 900V 6.9... |
40 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 900V 11A... |
140 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 900V 15A... |
18 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 900V 5.1... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 900V 5.7... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 12A... |
148 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 560V 9A... |
272 | 5,520 | Get Quote |